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The MESD MOSFET Electrical Simulation Dataset is an extensive collection of I‑V and C‑V characteristic data, covering Berkeley Short‑channel IGFET model (BSIM) simulations from various foundries under different bias voltages, temperatures, and MOSFET physical dimensions. The dataset spans multiple technology nodes from 3 nm to 350 nm, serving as a standardized benchmark for evaluating and comparing MOSFET models, assisting semiconductor researchers and model developers in assessing simulation accuracy.
